FZ wafer, FZ silicon products, gas-doped FZ silicon
We can provide high-quality, high-purity, high-resistance FZ silicon manufactured using the FZ method with low levels of pollutants.
Gas-doped FZ silicon is FZ silicon that has been doped with impurities by pulling a single crystal in a dopant gas. Our company can provide high-quality, high-purity FZ silicon. Currently, due to its low level of contaminants, FZ silicon is widely used not only in existing memory and DSP ICs but also in the fields of MEMS and optoelectronic sensors. Please contact us for more details. ★Prime Grade FZ ingot (available for immediate delivery) A manufacturer's Certificate of Compliance (CofC) will be provided upon delivery. Specifications: Orientation: (1-1-1) ± 2 deg. Diameter (mm): 101.60 ± 0.20 Length (mm): 200 - 400 First Orientation Flat (mm): 30.5 - 34.5 (1-10) +/- 1 Deg. Second Orientation Flat (mm): N.A. Type: N-type/Phosphorus Lifetime (microsec): 1000 Resistivity (ohm cm) at 25°C: 2032.00 Resistivity Tolerance (ohm cm): ±700.00 RRV [%]: N.A.
- Company：エナテック 東京本社
- Price：Other
